SCTH100N65G2-7AG

STMicroelectronics

Produkt-Nr.:

SCTH100N65G2-7AG

Hersteller:

Paket:

H2PAK-7

Charge:

Datenblatt:

Beschreibung:

SICFET N-CH 650V 95A H2PAK-7

Menge:

Lieferung:

Zahlung:

Auf Lager : Bitte Anfrage

Bitte senden Sie RFQ, wir werden sofort antworten.

Name des Kontakts

E-Mail

Firmenname

Land

Menge

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3315 pF @ 520 V
Gate Charge (Qg) (Max) @ Vgs	162 nC @ 18 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	26mOhm @ 50A, 18V
Supplier Device Package	H2PAK-7
Vgs(th) (Max) @ Id	5V @ 5mA
Drain to Source Voltage (Vdss)	650 V
Series	Automotive, AEC-Q101
Power Dissipation (Max)	360W (Tc)
Package / Case	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Technology	SiCFET (Silicon Carbide)
Mfr	STMicroelectronics
Current - Continuous Drain (Id) @ 25°C	95A (Tc)
Vgs (Max)	+22V, -10V
Drive Voltage (Max Rds On, Min Rds On)	18V
Package	Tape & Reel (TR)
Base Product Number	SCTH100