SCTH35N65G2V-7AG

STMicroelectronics

Produkt-Nr.:

SCTH35N65G2V-7AG

Hersteller:

Paket:

H2PAK-7

Charge:

Datenblatt:

Beschreibung:

SICFET N-CH 650V 45A H2PAK-7

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1370 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs	73 nC @ 20 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	67mOhm @ 20A, 20V
Supplier Device Package	H2PAK-7
Vgs(th) (Max) @ Id	3.2V @ 1mA
Drain to Source Voltage (Vdss)	650 V
Series	Automotive, AEC-Q101
Power Dissipation (Max)	208W (Tc)
Package / Case	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Technology	SiCFET (Silicon Carbide)
Mfr	STMicroelectronics
Current - Continuous Drain (Id) @ 25°C	45A (Tc)
Vgs (Max)	+22V, -10V
Drive Voltage (Max Rds On, Min Rds On)	18V, 20V
Package	Tape & Reel (TR)
Base Product Number	SCTH35