SCTL35N65G2V

STMicroelectronics

Produkt-Nr.:

SCTL35N65G2V

Hersteller:

Paket:

PowerFlat™ (8x8) HV

Charge:

Datenblatt:

Beschreibung:

TRANS SJT N-CH 650V PWRFLAT HV

Menge:

Lieferung:

Zahlung:

Auf Lager : Bitte Anfrage

Bitte senden Sie RFQ, wir werden sofort antworten.

Name des Kontakts

E-Mail

Firmenname

Land

Menge

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1370 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs	73 nC @ 20 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	67mOhm @ 20A, 20V
Supplier Device Package	PowerFlat™ (8x8) HV
Vgs(th) (Max) @ Id	5V @ 1mA
Drain to Source Voltage (Vdss)	650 V
Series	-
Power Dissipation (Max)	417W (Tc)
Package / Case	8-PowerVDFN
Technology	SiCFET (Silicon Carbide)
Mfr	STMicroelectronics
Current - Continuous Drain (Id) @ 25°C	40A (Tc)
Vgs (Max)	+22V, -10V
Package	Tape & Reel (TR)
Base Product Number	SCTL35