SI1315DL-T1-GE3

Vishay Siliconix

Produkt-Nr.:

SI1315DL-T1-GE3

Hersteller:

Paket:

SC-70-3

Charge:

Datenblatt:

Beschreibung:

MOSFET P-CH 8V 900MA SOT323

Menge:

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Operating Temperature	-50°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	112 pF @ 4 V
Gate Charge (Qg) (Max) @ Vgs	3.4 nC @ 4.5 V
Mounting Type	Surface Mount
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	336mOhm @ 800mA, 4.5V
Supplier Device Package	SC-70-3
Vgs(th) (Max) @ Id	800mV @ 250µA
Drain to Source Voltage (Vdss)	8 V
Series	TrenchFET®
Power Dissipation (Max)	300mW (Ta), 400mW (Tc)
Package / Case	SC-70, SOT-323
Technology	MOSFET (Metal Oxide)
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	900mA (Tc)
Vgs (Max)	±8V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	SI1315