SI1905BDH-T1-E3

Vishay Siliconix

Produkt-Nr.:

SI1905BDH-T1-E3

Hersteller:

Paket:

SC-70-6

Charge:

Datenblatt:

Beschreibung:

MOSFET 2P-CH 8V 0.63A SC70-6

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	Logic Level Gate
Configuration	2 P-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds	62pF @ 4V
Gate Charge (Qg) (Max) @ Vgs	1.5nC @ 4.5V
Mounting Type	Surface Mount
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	542mOhm @ 580mA, 4.5V
Supplier Device Package	SC-70-6
Vgs(th) (Max) @ Id	1V @ 250µA
Drain to Source Voltage (Vdss)	8V
Series	TrenchFET®
Package / Case	6-TSSOP, SC-88, SOT-363
Technology	MOSFET (Metal Oxide)
Power - Max	357mW
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	630mA
Package	Tape & Reel (TR)
Base Product Number	SI1905