SI4511DY-T1-E3

Vishay Siliconix

Produkt-Nr.:

SI4511DY-T1-E3

Hersteller:

Paket:

8-SOIC

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Datenblatt:

Beschreibung:

MOSFET N/P-CH 20V 7.2A 8-SOIC

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FET Feature	Logic Level Gate
Configuration	N and P-Channel
Input Capacitance (Ciss) (Max) @ Vds	-
Gate Charge (Qg) (Max) @ Vgs	18nC @ 4.5V
Mounting Type	Surface Mount
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	14.5mOhm @ 9.6A, 10V
Supplier Device Package	8-SOIC
Vgs(th) (Max) @ Id	1.8V @ 250µA
Drain to Source Voltage (Vdss)	20V
Series	-
Package / Case	8-SOIC (0.154", 3.90mm Width)
Technology	MOSFET (Metal Oxide)
Power - Max	1.1W
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	7.2A, 4.6A
Package	Cut Tape (CT)
Base Product Number	SI4511