SI8439DB-T1-E1

Vishay Siliconix

Produkt-Nr.:

SI8439DB-T1-E1

Hersteller:

Paket:

4-Microfoot

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Datenblatt:

Beschreibung:

MOSFET P-CH 8V 4MICROFOOT

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	50 nC @ 4.5 V
Mounting Type	Surface Mount
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	25mOhm @ 1.5A, 4.5V
Supplier Device Package	4-Microfoot
Vgs(th) (Max) @ Id	800mV @ 250µA
Drain to Source Voltage (Vdss)	8 V
Series	TrenchFET®
Power Dissipation (Max)	1.1W (Ta), 2.7W (Tc)
Package / Case	4-UFBGA
Technology	MOSFET (Metal Oxide)
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	5.9A (Ta)
Vgs (Max)	±5V
Drive Voltage (Max Rds On, Min Rds On)	1.2V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	SI8439