SIDC24D30SIC3

Infineon Technologies

Produkt-Nr.:

SIDC24D30SIC3

Hersteller:

Paket:

Sawn on foil

Charge:

Datenblatt:

Beschreibung:

DIODE SIL CARB 300V 10A WAFER

Menge:

Lieferung:

Zahlung:

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Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0 ns
Capacitance @ Vr, F	600pF @ 1V, 1MHz
Mounting Type	Surface Mount
Product Status	Discontinued at Digi-Key
Supplier Device Package	Sawn on foil
Current - Reverse Leakage @ Vr	200 µA @ 300 V
Series	-
Package / Case	Die
Technology	SiC (Silicon Carbide) Schottky
Voltage - Forward (Vf) (Max) @ If	1.7 V @ 10 A
Mfr	Infineon Technologies
Voltage - DC Reverse (Vr) (Max)	300 V
Package	Bulk
Operating Temperature - Junction	-55°C ~ 175°C
Current - Average Rectified (Io)	10A
Base Product Number	SIDC24D