SIHD1K4N60E-GE3

Vishay Siliconix

Produkt-Nr.:

SIHD1K4N60E-GE3

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Paket:

D-Pak

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Beschreibung:

MOSFET N-CH 600V 4.2A TO252AA

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	172 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	7.5 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	1.45Ohm @ 500mA, 10V
Supplier Device Package	D-Pak
Vgs(th) (Max) @ Id	5V @ 250µA
Drain to Source Voltage (Vdss)	600 V
Series	E
Power Dissipation (Max)	63W (Tc)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	4.2A (Tc)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk
Base Product Number	SIHD1