SPD03N60C3

Infineon Technologies

Produkt-Nr.:

SPD03N60C3

Hersteller:

Paket:

PG-TO252-3-313

Charge:

Datenblatt:

Beschreibung:

MOSFET N-CH 600V 3.2A TO252

Menge:

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	17 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	1.4Ohm @ 2A, 10V
Supplier Device Package	PG-TO252-3-313
Vgs(th) (Max) @ Id	3.9V @ 135µA
Drain to Source Voltage (Vdss)	600 V
Series	-
Power Dissipation (Max)	38W (Tc)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	3.2A (Tc)
Vgs (Max)	±20V
Package	Bulk