SPU02N60C3

Infineon Technologies

Produkt-Nr.:

SPU02N60C3

Hersteller:

Paket:

PG-TO-251-3-21

Charge:

Datenblatt:

Beschreibung:

SPU02N60 - 600V COOLMOS N-CHANNE

Menge:

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	12.5 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	3Ohm @ 1.1A, 10V
Supplier Device Package	PG-TO-251-3-21
Vgs(th) (Max) @ Id	3.9V @ 80µA
Drain to Source Voltage (Vdss)	600 V
Series	CoolMOS™
Power Dissipation (Max)	25W (Tc)
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	1.8A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk