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SQJ204EP-T1_GE3

Vishay Siliconix

Produkt-Nr.:

SQJ204EP-T1_GE3

Hersteller:

Vishay Siliconix

Paket:

PowerPAK® SO-8 Dual Asymmetric

Charge:

-

Datenblatt:

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Beschreibung:

MOSFET DUAL N-CH 12V PPAK SO-8L

Menge:

Lieferung:

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Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Configuration 2 N-Channel (Dual) Asymmetrical
Input Capacitance (Ciss) (Max) @ Vds 1400pF @ 6V, 3700pF @ 6V
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V, 50nC @ 10V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 8.3mOhm @ 4A, 10V, 3mOhm @ 10A, 10V
Supplier Device Package PowerPAK® SO-8 Dual Asymmetric
Vgs(th) (Max) @ Id 1.5V @ 250µA
Drain to Source Voltage (Vdss) 12V
Series Automotive, AEC-Q101, TrenchFET®
Package / Case PowerPAK® SO-8 Dual
Technology MOSFET (Metal Oxide)
Power - Max 27W (Tc), 48W (Tc)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 20A (Tc), 60A (Tc)
Package Tape & Reel (TR)
Base Product Number SQJ204