SQJ570EP-T1_GE3

Vishay Siliconix

Produkt-Nr.:

SQJ570EP-T1_GE3

Hersteller:

Paket:

PowerPAK® SO-8 Dual

Charge:

Datenblatt:

Beschreibung:

MOSFET N/P-CH 100V POWERPAK SO8

Menge:

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Configuration	N and P-Channel
Input Capacitance (Ciss) (Max) @ Vds	650pF @ 25V, 600pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	20nC @ 10V, 15nC @ 10V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	45mOhm @ 6A, 10V, 146mOhm @ 6A, 10V
Supplier Device Package	PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id	2.5V @ 250µA
Drain to Source Voltage (Vdss)	100V
Series	Automotive, AEC-Q101, TrenchFET®
Package / Case	PowerPAK® SO-8 Dual
Technology	MOSFET (Metal Oxide)
Power - Max	27W
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	15A (Tc), 9.5A (Tc)
Package	Tape & Reel (TR)
Base Product Number	SQJ570