SSM3K59CTB,L3F

Toshiba Semiconductor and Storage

Produkt-Nr.:

SSM3K59CTB,L3F

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Paket:

CST3B

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Beschreibung:

MOSFET N-CH 40V 2A CST3B

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Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	130 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	1.1 nC @ 4.2 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	215mOhm @ 1A, 8V
Supplier Device Package	CST3B
Vgs(th) (Max) @ Id	1.2V @ 1mA
Drain to Source Voltage (Vdss)	40 V
Series	U-MOSVII-H
Power Dissipation (Max)	1W (Ta)
Package / Case	3-SMD, No Lead
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	2A (Ta)
Vgs (Max)	±12V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 8V
Package	Tape & Reel (TR)
Base Product Number	SSM3K59