SSM6K411TU(TE85L,F

Toshiba Semiconductor and Storage

Produkt-Nr.:

SSM6K411TU(TE85L,F

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Paket:

UF6

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Beschreibung:

MOSFET N-CH 20V 10A UF6

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Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	710 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	9.4 nC @ 4.5 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	12mOhm @ 7A, 4.5V
Supplier Device Package	UF6
Vgs(th) (Max) @ Id	1.2V @ 1mA
Drain to Source Voltage (Vdss)	20 V
Series	U-MOSIV
Power Dissipation (Max)	1W (Ta)
Package / Case	6-SMD, Flat Leads
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	10A (Ta)
Vgs (Max)	±12V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	SSM6K411