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SSM6N48FU,RF(D

Toshiba Semiconductor and Storage

Produkt-Nr.:

SSM6N48FU,RF(D

Paket:

US6

Charge:

-

Datenblatt:

-

Beschreibung:

MOSFET 2N-CH 30V 0.1A

Menge:

Lieferung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature Logic Level Gate, 2.5V Drive
Configuration 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds 15.1pF @ 3V
Gate Charge (Qg) (Max) @ Vgs -
Mounting Type Surface Mount
Product Status Obsolete
Rds On (Max) @ Id, Vgs 3.2Ohm @ 10mA, 4V
Supplier Device Package US6
Vgs(th) (Max) @ Id 1.5V @ 100µA
Drain to Source Voltage (Vdss) 30V
Series -
Package / Case 6-TSSOP, SC-88, SOT-363
Technology MOSFET (Metal Oxide)
Power - Max 300mW
Mfr Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C 100mA (Ta)
Package Tape & Reel (TR)
Base Product Number SSM6N48