STH52N10LF3-2AG

STMicroelectronics

Produkt-Nr.:

STH52N10LF3-2AG

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Paket:

H2Pak-2

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Datenblatt:

Beschreibung:

MOSFET N-CH 100V 52A H2PAK-2

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1900 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs	18.5 nC @ 5 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	20mOhm @ 26A, 10V
Supplier Device Package	H2Pak-2
Vgs(th) (Max) @ Id	2.5V @ 250µA
Drain to Source Voltage (Vdss)	100 V
Series	STripFET™ F3
Power Dissipation (Max)	110W (Tc)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Mfr	STMicroelectronics
Current - Continuous Drain (Id) @ 25°C	52A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
Package	Tape & Reel (TR)
Base Product Number	STH52