STN2NE10L

STMicroelectronics

Produkt-Nr.:

STN2NE10L

Hersteller:

Paket:

SOT-223

Charge:

Datenblatt:

Beschreibung:

MOSFET N-CH 100V 1.8A SOT-223

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Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	345 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	14 nC @ 5 V
Mounting Type	Surface Mount
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	400mOhm @ 1A, 10V
Supplier Device Package	SOT-223
Vgs(th) (Max) @ Id	3V @ 250µA
Drain to Source Voltage (Vdss)	100 V
Series	STripFET™
Power Dissipation (Max)	2.5W (Tc)
Package / Case	TO-261-4, TO-261AA
Technology	MOSFET (Metal Oxide)
Mfr	STMicroelectronics
Current - Continuous Drain (Id) @ 25°C	1.8A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
Package	Tape & Reel (TR)
Base Product Number	STN2N