STS10P4LLF6

STMicroelectronics

Produkt-Nr.:

STS10P4LLF6

Hersteller:

Paket:

8-SOIC

Charge:

Datenblatt:

Beschreibung:

MOSFET P-CH 40V 10A 8SO

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Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	3525 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	34 nC @ 4.5 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	15mOhm @ 3A, 10V
Supplier Device Package	8-SOIC
Vgs(th) (Max) @ Id	1V @ 250µA (Min)
Drain to Source Voltage (Vdss)	40 V
Series	STripFET™ F6
Power Dissipation (Max)	2.7W (Ta)
Package / Case	8-SOIC (0.154", 3.90mm Width)
Technology	MOSFET (Metal Oxide)
Mfr	STMicroelectronics
Current - Continuous Drain (Id) @ 25°C	10A (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	STS10