TJ9A10M3,S4Q

Toshiba Semiconductor and Storage

Produkt-Nr.:

TJ9A10M3,S4Q

Hersteller:

Paket:

TO-220SIS

Charge:

Datenblatt:

Beschreibung:

TJ9A10M3,S4Q

Menge:

Lieferung:

Zahlung:

Auf Lager : Bitte Anfrage

Bitte senden Sie RFQ, wir werden sofort antworten.

Name des Kontakts

E-Mail

Firmenname

Land

Menge

Operating Temperature	150°C
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	2900 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	47 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	170mOhm @ 4.5A, 10V
Supplier Device Package	TO-220SIS
Vgs(th) (Max) @ Id	4V @ 1mA
Drain to Source Voltage (Vdss)	100 V
Series	U-MOSVI
Power Dissipation (Max)	19W (Tc)
Package / Case	TO-220-3 Full Pack
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	9A (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	TJ9A10