TK14C65W,S1Q

Toshiba Semiconductor and Storage

Produkt-Nr.:

TK14C65W,S1Q

Hersteller:

Paket:

I2PAK

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Datenblatt:

Beschreibung:

MOSFET N-CH 650V 13.7A I2PAK

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Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1300 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs	35 nC @ 10 V
Mounting Type	Through Hole
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	250mOhm @ 6.9A, 10V
Supplier Device Package	I2PAK
Vgs(th) (Max) @ Id	3.5V @ 690µA
Drain to Source Voltage (Vdss)	650 V
Series	DTMOSIV
Power Dissipation (Max)	130W (Tc)
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	13.7A (Ta)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	TK14C65