TK1P90A,LQ(CO

Toshiba Semiconductor and Storage

Produkt-Nr.:

TK1P90A,LQ(CO

Hersteller:

Paket:

PW-MOLD

Charge:

Datenblatt:

Beschreibung:

MOSFET N-CH 900V 1A PW-MOLD

Menge:

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Operating Temperature	150°C
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	320 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	13 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	9Ohm @ 500mA, 10V
Supplier Device Package	PW-MOLD
Vgs(th) (Max) @ Id	4V @ 1mA
Drain to Source Voltage (Vdss)	900 V
Series	-
Power Dissipation (Max)	20W (Tc)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	1A (Ta)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	TK1P90