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TK2P60D(TE16L1,NV)

Toshiba Semiconductor and Storage

Produkt-Nr.:

TK2P60D(TE16L1,NV)

Paket:

PW-MOLD

Charge:

-

Datenblatt:

-

Beschreibung:

MOSFET N-CH 600V 2A PW-MOLD

Menge:

Lieferung:

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Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature 150°C
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 280 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 7 nC @ 10 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 4.3Ohm @ 1A, 10V
Supplier Device Package PW-MOLD
Vgs(th) (Max) @ Id 4.4V @ 1mA
Drain to Source Voltage (Vdss) 600 V
Series -
Power Dissipation (Max) 60W (Tc)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Mfr Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C 2A (Ta)
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number TK2P60