TK4R3A06PL,S4X

Toshiba Semiconductor and Storage

Produkt-Nr.:

TK4R3A06PL,S4X

Hersteller:

Paket:

TO-220SIS

Charge:

Datenblatt:

Beschreibung:

MOSFET N-CH 60V 68A TO220SIS

Menge:

Lieferung:

Zahlung:

Auf Lager : Bitte Anfrage

Bitte senden Sie RFQ, wir werden sofort antworten.

Name des Kontakts

E-Mail

Firmenname

Land

Menge

Operating Temperature	175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3280 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs	48.2 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	7.2mOhm @ 15A, 4.5V
Supplier Device Package	TO-220SIS
Vgs(th) (Max) @ Id	2.5V @ 500µA
Drain to Source Voltage (Vdss)	60 V
Series	U-MOSIX-H
Power Dissipation (Max)	36W (Tc)
Package / Case	TO-220-3 Full Pack
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	68A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tube
Base Product Number	TK4R3A06