TK5A60W5,S5VX

Toshiba Semiconductor and Storage

Produkt-Nr.:

TK5A60W5,S5VX

Hersteller:

Paket:

TO-220SIS

Charge:

Datenblatt:

Beschreibung:

PB-F POWER MOSFET TRANSISTOR TO-

Menge:

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Operating Temperature	150°C
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	370 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs	11.5 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	950mOhm @ 2.3A, 10V
Supplier Device Package	TO-220SIS
Vgs(th) (Max) @ Id	4.5V @ 230µA
Drain to Source Voltage (Vdss)	600 V
Series	DTMOSIV
Power Dissipation (Max)	30W (Tc)
Package / Case	TO-220-3 Full Pack
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	4.5A (Ta)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube