TP65H070G4LSGB-TR

Transphorm

Produkt-Nr.:

TP65H070G4LSGB-TR

Hersteller:

Paket:

8-PQFN (8x8)

Charge:

Datenblatt:

Beschreibung:

GANFET N-CH 650V 29A QFN8X8

Menge:

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Zahlung:

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	600 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs	8.4 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	85mOhm @ 16A, 10V
Supplier Device Package	8-PQFN (8x8)
Vgs(th) (Max) @ Id	4.6V @ 700µA
Drain to Source Voltage (Vdss)	650 V
Series	SuperGaN®
Power Dissipation (Max)	96W (Tc)
Package / Case	8-PowerTDFN
Technology	GaNFET (Gallium Nitride)
Mfr	Transphorm
Current - Continuous Drain (Id) @ 25°C	29A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)