TPCC8009,LQ(O

Toshiba Semiconductor and Storage

Produkt-Nr.:

TPCC8009,LQ(O

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Paket:

8-TSON Advance (3.1x3.1)

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Datenblatt:

Beschreibung:

MOSFET N-CH 30V 24A 8TSON

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Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1270 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	26 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	7mOhm @ 12A, 10V
Supplier Device Package	8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id	3V @ 200µA
Drain to Source Voltage (Vdss)	30 V
Series	U-MOSIV
Power Dissipation (Max)	-
Package / Case	8-PowerVDFN
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	24A (Ta)
Package	Tape & Reel (TR)
Base Product Number	TPCC8009