TPCC8093,L1Q

Toshiba Semiconductor and Storage

Produkt-Nr.:

TPCC8093,L1Q

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Paket:

8-TSON Advance (3.1x3.1)

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Beschreibung:

MOSFET N-CH 20V 21A 8TSON

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Operating Temperature	150°C
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1860 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	16 nC @ 5 V
Mounting Type	Surface Mount
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	5.8mOhm @ 10.5A, 4.5V
Supplier Device Package	8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id	1.2V @ 500µA
Drain to Source Voltage (Vdss)	20 V
Series	U-MOSVII
Power Dissipation (Max)	1.9W (Ta), 30W (Tc)
Package / Case	8-PowerVDFN
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	21A (Ta)
Vgs (Max)	±12V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	TPCC8093