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TPCF8201(TE85L,F,M

Toshiba Semiconductor and Storage

Produkt-Nr.:

TPCF8201(TE85L,F,M

Paket:

VS-8 (2.9x1.5)

Charge:

-

Datenblatt:

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Beschreibung:

MOSFET 2N-CH 20V 3A VS-8

Menge:

Lieferung:

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Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature 150°C (TJ)
FET Feature Logic Level Gate
Configuration 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds 590pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 7.5nC @ 5V
Mounting Type Surface Mount
Product Status Obsolete
Rds On (Max) @ Id, Vgs 49mOhm @ 1.5A, 4.5V
Supplier Device Package VS-8 (2.9x1.5)
Vgs(th) (Max) @ Id 1.2V @ 200µA
Drain to Source Voltage (Vdss) 20V
Series -
Package / Case 8-SMD, Flat Lead
Technology MOSFET (Metal Oxide)
Power - Max 330mW
Mfr Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C 3A
Package Tape & Reel (TR)
Base Product Number TPCF8201