TPD3215M

Transphorm

Produkt-Nr.:

TPD3215M

Hersteller:

Paket:

Module

Charge:

Datenblatt:

Beschreibung:

GANFET 2N-CH 600V 70A MODULE

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Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	-
Configuration	2 N-Channel (Half Bridge)
Input Capacitance (Ciss) (Max) @ Vds	2260pF @ 100V
Gate Charge (Qg) (Max) @ Vgs	28nC @ 8V
Mounting Type	Through Hole
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	34mOhm @ 30A, 8V
Supplier Device Package	Module
Vgs(th) (Max) @ Id	-
Drain to Source Voltage (Vdss)	600V
Series	-
Package / Case	Module
Technology	GaNFET (Gallium Nitride)
Power - Max	470W
Mfr	Transphorm
Current - Continuous Drain (Id) @ 25°C	70A (Tc)
Package	Bulk
Base Product Number	TPD3215