TPS1100DR

Texas Instruments

Produkt-Nr.:

TPS1100DR

Hersteller:

Paket:

8-SOIC

Charge:

Datenblatt:

Beschreibung:

MOSFET P-CH 15V 1.6A 8SOIC

Menge:

Lieferung:

Zahlung:

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Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	5.45 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	180mOhm @ 1.5A, 10V
Supplier Device Package	8-SOIC
Vgs(th) (Max) @ Id	1.5V @ 250µA
Drain to Source Voltage (Vdss)	15 V
Series	-
Power Dissipation (Max)	791mW (Ta)
Package / Case	8-SOIC (0.154", 3.90mm Width)
Technology	MOSFET (Metal Oxide)
Mfr	Texas Instruments
Current - Continuous Drain (Id) @ 25°C	1.6A (Ta)
Vgs (Max)	+2V, -15V
Drive Voltage (Max Rds On, Min Rds On)	2.7V, 10V
Package	Tape & Reel (TR)
Base Product Number	TPS1100