TRS10E65C,S1Q

Toshiba Semiconductor and Storage

Produkt-Nr.:

TRS10E65C,S1Q

Hersteller:

Paket:

TO-220-2L

Charge:

Datenblatt:

Beschreibung:

DIODE SIL CARB 650V 10A TO220-2L

Menge:

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Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0 ns
Capacitance @ Vr, F	-
Mounting Type	Through Hole
Product Status	Obsolete
Supplier Device Package	TO-220-2L
Current - Reverse Leakage @ Vr	90 µA @ 650 V
Series	-
Package / Case	TO-220-2
Technology	SiC (Silicon Carbide) Schottky
Voltage - Forward (Vf) (Max) @ If	1.7 V @ 10 A
Mfr	Toshiba Semiconductor and Storage
Voltage - DC Reverse (Vr) (Max)	650 V
Package	Tube
Operating Temperature - Junction	175°C (Max)
Current - Average Rectified (Io)	10A
Base Product Number	TRS10E65