TRS12N65FB,S1F(S

Toshiba Semiconductor and Storage

Produkt-Nr.:

TRS12N65FB,S1F(S

Hersteller:

Paket:

TO-247

Charge:

Datenblatt:

Beschreibung:

DODE SCHOTTKY 650V TO247

Menge:

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Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0 ns
Mounting Type	Through Hole
Product Status	Active
Supplier Device Package	TO-247
Current - Reverse Leakage @ Vr	90 µA @ 650 V
Series	-
Package / Case	TO-247-3
Technology	SiC (Silicon Carbide) Schottky
Diode Configuration	1 Pair Common Cathode
Voltage - Forward (Vf) (Max) @ If	1.7 V @ 6 A
Mfr	Toshiba Semiconductor and Storage
Voltage - DC Reverse (Vr) (Max)	650 V
Package	Tube
Current - Average Rectified (Io) (per Diode)	6A (DC)
Operating Temperature - Junction	175°C (Max)
Base Product Number	TRS12N65