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TSM200N03DPQ33

Taiwan Semiconductor Corporation

Produkt-Nr.:

TSM200N03DPQ33

Paket:

8-PDFN (3x3)

Charge:

-

Datenblatt:

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Beschreibung:

30V, 20A, DUAL N-CHANNEL POWER M

Menge:

Lieferung:

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Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature Standard
Configuration 2 N-Channel
Input Capacitance (Ciss) (Max) @ Vds 345pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 4.1nC @ 4.5V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 20mOhm @ 10A, 10V
Supplier Device Package 8-PDFN (3x3)
Vgs(th) (Max) @ Id 2.5V @ 250µA
Drain to Source Voltage (Vdss) 30V
Series -
Package / Case 8-PowerWDFN
Technology MOSFET (Metal Oxide)
Power - Max 20W (Tc)
Mfr Taiwan Semiconductor Corporation
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Package Tape & Reel (TR)
Base Product Number TSM200