VQ2001P

Vishay Siliconix

Produkt-Nr.:

VQ2001P

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Beschreibung:

MOSFET 4P-CH 30V 0.6A 14DIP

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Configuration	4 P-Channel
Input Capacitance (Ciss) (Max) @ Vds	150pF @ 15V
Gate Charge (Qg) (Max) @ Vgs	-
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	2Ohm @ 1A, 12V
Supplier Device Package	-
Vgs(th) (Max) @ Id	4.5V @ 1mA
Drain to Source Voltage (Vdss)	30V
Series	-
Package / Case	-
Technology	MOSFET (Metal Oxide)
Power - Max	2W
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	600mA
Package	Tube
Base Product Number	VQ2001