VQ3001P-E3

Vishay Siliconix

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VQ3001P-E3

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Beschreibung:

MOSFET 2N/2P-CH 30V 14DIP

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Configuration	2 N and 2 P-Channel
Input Capacitance (Ciss) (Max) @ Vds	110pF @ 15V, 150pF @ 15V
Gate Charge (Qg) (Max) @ Vgs	-
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	1Ohm @ 1A, 12V
Supplier Device Package	-
Vgs(th) (Max) @ Id	2.5V @ 1mA
Drain to Source Voltage (Vdss)	30V
Series	-
Package / Case	-
Technology	MOSFET (Metal Oxide)
Power - Max	2W
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	850mA, 600mA
Package	Tube
Base Product Number	VQ3001