VWM200-01P

IXYS

Produkt-Nr.:

VWM200-01P

Hersteller:

Paket:

V2-PAK

Charge:

Datenblatt:

Beschreibung:

MOSFET 6N-CH 100V 210A V2

Menge:

Lieferung:

Zahlung:

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Operating Temperature	-40°C ~ 175°C (TJ)
FET Feature	-
Configuration	6 N-Channel (3-Phase Bridge)
Input Capacitance (Ciss) (Max) @ Vds	-
Gate Charge (Qg) (Max) @ Vgs	430nC @ 10V
Mounting Type	Chassis Mount
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	5.2mOhm @ 100A, 10V
Supplier Device Package	V2-PAK
Vgs(th) (Max) @ Id	4V @ 2mA
Drain to Source Voltage (Vdss)	100V
Series	-
Package / Case	V2-PAK
Technology	MOSFET (Metal Oxide)
Power - Max	-
Mfr	IXYS
Current - Continuous Drain (Id) @ 25°C	210A
Package	Box
Base Product Number	VWM200