WNSC2D08650TJ

WeEn Semiconductors

Produkt-Nr.:

WNSC2D08650TJ

Hersteller:

Paket:

5-DFN (8x8)

Charge:

Datenblatt:

Beschreibung:

DIODE SIL CARBIDE 650V 8A 5DFN

Menge:

Lieferung:

Zahlung:

Auf Lager : Bitte Anfrage

Bitte senden Sie RFQ, wir werden sofort antworten.

Name des Kontakts

E-Mail

Firmenname

Land

Menge

Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0 ns
Capacitance @ Vr, F	260pF @ 1V, 1MHz
Mounting Type	Surface Mount
Product Status	Active
Supplier Device Package	5-DFN (8x8)
Current - Reverse Leakage @ Vr	40 µA @ 650 V
Series	-
Package / Case	4-VSFN Exposed Pad
Technology	SiC (Silicon Carbide) Schottky
Voltage - Forward (Vf) (Max) @ If	1.7 V @ 8 A
Mfr	WeEn Semiconductors
Voltage - DC Reverse (Vr) (Max)	650 V
Package	Tape & Reel (TR)
Operating Temperature - Junction	175°C
Current - Average Rectified (Io)	8A
Base Product Number	WNSC2