WNSC5D04650D6J

WeEn Semiconductors

Produkt-Nr.:

WNSC5D04650D6J

Hersteller:

Paket:

DPAK

Charge:

Datenblatt:

Beschreibung:

DIODE SIL CARBIDE 650V 4A DPAK

Menge:

Lieferung:

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Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0 ns
Capacitance @ Vr, F	138pF @ 1V, 1MHz
Mounting Type	Surface Mount
Product Status	Active
Supplier Device Package	DPAK
Current - Reverse Leakage @ Vr	20 µA @ 650 V
Series	-
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	SiC (Silicon Carbide) Schottky
Voltage - Forward (Vf) (Max) @ If	1.7 V @ 4 A
Mfr	WeEn Semiconductors
Voltage - DC Reverse (Vr) (Max)	650 V
Package	Tape & Reel (TR)
Operating Temperature - Junction	-55°C ~ 175°C
Current - Average Rectified (Io)	4A
Base Product Number	WNSC5