XP10NA011J

XSemi Corporation

Produkt-Nr.:

XP10NA011J

Hersteller:

Paket:

TO-251S

Charge:

Datenblatt:

Beschreibung:

MOSFET N-CH 100V 300A TOLL

Menge:

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2288 pF @ 80 V
Gate Charge (Qg) (Max) @ Vgs	56 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	11mOhm @ 30A, 10V
Supplier Device Package	TO-251S
Vgs(th) (Max) @ Id	4V @ 250µA
Drain to Source Voltage (Vdss)	100 V
Series	XS10NA011
Power Dissipation (Max)	1.13W (Ta), 50W (Tc)
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Technology	MOSFET (Metal Oxide)
Mfr	XSemi Corporation
Current - Continuous Drain (Id) @ 25°C	48.5A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tube