FQA47P06

onsemi

Produkt-Nr.:

FQA47P06

Hersteller:

Paket:

TO-3P

Charge:

Datenblatt:

Beschreibung:

MOSFET P-CH 60V 55A TO3P

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	3600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	110 nC @ 10 V
Mounting Type	Through Hole
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	26mOhm @ 27.5A, 10V
Supplier Device Package	TO-3P
Vgs(th) (Max) @ Id	4V @ 250µA
Drain to Source Voltage (Vdss)	60 V
Series	QFET®
Power Dissipation (Max)	214W (Tc)
Package / Case	TO-3P-3, SC-65-3
Technology	MOSFET (Metal Oxide)
Mfr	onsemi
Current - Continuous Drain (Id) @ 25°C	55A (Tc)
Vgs (Max)	±25V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	FQA4