IXTR200N10P

IXYS

Produkt-Nr.:

IXTR200N10P

Hersteller:

Paket:

ISOPLUS247™

Charge:

Datenblatt:

Beschreibung:

MOSFET N-CH 100V 120A ISOPLUS247

Menge:

Lieferung:

Zahlung:

Auf Lager : Bitte Anfrage

Bitte senden Sie RFQ, wir werden sofort antworten.

Name des Kontakts

E-Mail

Firmenname

Land

Menge

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	7600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	235 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	8mOhm @ 60A, 10V
Supplier Device Package	ISOPLUS247™
Vgs(th) (Max) @ Id	5V @ 500µA
Drain to Source Voltage (Vdss)	100 V
Series	Polar
Power Dissipation (Max)	300W (Tc)
Package / Case	TO-247-3
Technology	MOSFET (Metal Oxide)
Mfr	IXYS
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IXTR200