IXTY01N100D

IXYS

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IXTY01N100D

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Paket:

TO-252AA

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Beschreibung:

MOSFET N-CH 1000V 400MA TO252AA

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	Depletion Mode
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	5.8 nC @ 5 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	80Ohm @ 50mA, 0V
Supplier Device Package	TO-252AA
Vgs(th) (Max) @ Id	4.5V @ 25µA
Drain to Source Voltage (Vdss)	1000 V
Series	Depletion
Power Dissipation (Max)	1.1W (Ta), 25W (Tc)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Mfr	IXYS
Current - Continuous Drain (Id) @ 25°C	400mA (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	0V
Package	Tube
Base Product Number	IXTY01