PDTB114ETR

NXP Semiconductors

Produkt-Nr.:

PDTB114ETR

Hersteller:

Paket:

TO-236AB

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Beschreibung:

PDTB114ET - 500 MA, 50 V PNP RES

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Frequency - Transition	140 MHz
Current - Collector (Ic) (Max)	500 mA
Vce Saturation (Max) @ Ib, Ic	100mV @ 2.5mA, 50mA
Resistor - Base (R1)	10 kOhms
Mounting Type	Surface Mount
Product Status	Obsolete
Voltage - Collector Emitter Breakdown (Max)	50 V
Supplier Device Package	TO-236AB
Series	-
Transistor Type	PNP - Pre-Biased
Package / Case	TO-236-3, SC-59, SOT-23-3
Power - Max	320 mW
Mfr	NXP Semiconductors
Resistor - Emitter Base (R2)	10 kOhms
Current - Collector Cutoff (Max)	500nA
Package	Bulk
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 50mA, 5V
Base Product Number	PDTB114