SI1012X-T1-E3

Vishay Siliconix

Produkt-Nr.:

SI1012X-T1-E3

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Paket:

SC-89-3

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Beschreibung:

MOSFET N-CH 20V 500MA SC89-3

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	0.75 nC @ 4.5 V
Mounting Type	Surface Mount
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	700mOhm @ 600mA, 4.5V
Supplier Device Package	SC-89-3
Vgs(th) (Max) @ Id	900mV @ 250µA
Drain to Source Voltage (Vdss)	20 V
Series	TrenchFET®
Power Dissipation (Max)	250mW (Ta)
Package / Case	SC-89, SOT-490
Technology	MOSFET (Metal Oxide)
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	500mA (Ta)
Vgs (Max)	±6V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	SI1012