SI3911DV-T1-E3

Vishay Siliconix

Produkt-Nr.:

SI3911DV-T1-E3

Hersteller:

Paket:

6-TSOP

Charge:

Datenblatt:

Beschreibung:

MOSFET 2P-CH 20V 1.8A 6TSOP

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FET Feature	Logic Level Gate
Configuration	2 P-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds	-
Gate Charge (Qg) (Max) @ Vgs	7.5nC @ 4.5V
Mounting Type	Surface Mount
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	145mOhm @ 2.2A, 4.5V
Supplier Device Package	6-TSOP
Vgs(th) (Max) @ Id	450mV @ 250µA (Min)
Drain to Source Voltage (Vdss)	20V
Series	-
Package / Case	SOT-23-6 Thin, TSOT-23-6
Technology	MOSFET (Metal Oxide)
Power - Max	830mW
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	1.8A
Package	Cut Tape (CT)
Base Product Number	SI3911