SIHU3N50DA-GE3

Vishay Siliconix

Produkt-Nr.:

SIHU3N50DA-GE3

Hersteller:

Paket:

IPAK (TO-251)

Charge:

Datenblatt:

Beschreibung:

MOSFET N-CHANNEL 500V 3A IPAK

Menge:

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	177 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	12 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	3.2Ohm @ 1.5A, 10V
Supplier Device Package	IPAK (TO-251)
Vgs(th) (Max) @ Id	4.5V @ 250µA
Drain to Source Voltage (Vdss)	500 V
Series	-
Power Dissipation (Max)	69W (Tc)
Package / Case	TO-251-3 Long Leads, IPak, TO-251AB
Technology	MOSFET (Metal Oxide)
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	3A (Tc)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	SIHU3