SPD09P06PL

Infineon Technologies

Produkt-Nr.:

SPD09P06PL

Hersteller:

Paket:

PG-TO252-3

Charge:

Datenblatt:

Beschreibung:

MOSFET P-CH 60V 9.7A TO252-3

Menge:

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	450 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	21 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Discontinued at Digi-Key
Rds On (Max) @ Id, Vgs	250mOhm @ 6.8A, 10V
Supplier Device Package	PG-TO252-3
Vgs(th) (Max) @ Id	2V @ 250µA
Drain to Source Voltage (Vdss)	60 V
Series	SIPMOS®
Power Dissipation (Max)	42W (Tc)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	9.7A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	SPD09P