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SQJ504EP-T1_GE3

Vishay Siliconix

Produkt-Nr.:

SQJ504EP-T1_GE3

Hersteller:

Vishay Siliconix

Paket:

PowerPAK® SO-8 Dual

Charge:

-

Datenblatt:

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Beschreibung:

MOSFET N/P CHAN 40V POWERPAK SO-

Menge:

Lieferung:

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Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Configuration N and P-Channel
Input Capacitance (Ciss) (Max) @ Vds 1900pF @ 25V, 4600pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V, 85nC @ 10V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 7.5mOhm @ 8A, 10V, 17mOhm @ 8A, 10V
Supplier Device Package PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id 2.5V @ 250µA
Drain to Source Voltage (Vdss) 40V
Series Automotive, AEC-Q101, TrenchFET®
Package / Case PowerPAK® SO-8 Dual
Technology MOSFET (Metal Oxide)
Power - Max 34W (Tc)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Package Tape & Reel (TR)
Base Product Number SQJ504