STFI11N65M2

STMicroelectronics

Produkt-Nr.:

STFI11N65M2

Hersteller:

Paket:

I2PAKFP (TO-281)

Charge:

Datenblatt:

Beschreibung:

MOSFET N-CH 650V 7A I2PAKFP

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Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	410 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	12.5 nC @ 10 V
Mounting Type	Through Hole
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	670mOhm @ 3.5A, 10V
Supplier Device Package	I2PAKFP (TO-281)
Vgs(th) (Max) @ Id	4V @ 250µA
Drain to Source Voltage (Vdss)	650 V
Series	MDmesh™ II Plus
Power Dissipation (Max)	25W (Tc)
Package / Case	TO-262-3 Full Pack, I²Pak
Technology	MOSFET (Metal Oxide)
Mfr	STMicroelectronics
Current - Continuous Drain (Id) @ 25°C	7A (Tc)
Vgs (Max)	±25V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	STFI11N